Name
Abstract | ||
|---|---|---|
Improving the energy-efficiency of the memory can help to meet energy constraints in the Internet of Things (IoT) devices. Recently, the Spin- Transfer- Torque based Magnetoresistive Random Access Memory (STT-MRAM) has emerged as a promising solution to design low-leakage memory for IoT devices. However, the STT mechanism results in higher dynamic power consumption. This article proposes a novel sense amplifier based on adiabatic logic for the STT-MRAM design. The proposed circuit shows an average of 68.92 % energy efficiency improvement in 8x8 STT-MRAM array in the IoT frequency range 1 MHz to 50 MHz. The SPICE simulation was carried out using 45nm CMOS technology and 40nm perpendicular magnetic anisotropy (PMA) Magnetic tunnel junctions (MTJs). |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/ISVLSI54635.2022.00053 | 2022 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) |
Keywords | DocType | ISSN |
Adiabatic logic,Sense-Amplifier,nonvolatile memory,Magnetic Tunnel Junction,STT-MRAM | Conference | 2159-3469 |
ISBN | Citations | PageRank |
978-1-6654-6606-6 | 0 | 0.34 |
References | Authors | |
8 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yang Wu | 1 | 84 | 18.42 |
| Amit Degada | 2 | 0 | 0.34 |
| Himanshu Thapliyal | 3 | 0 | 0.34 |