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BYUNG-KYU HO
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Name
Affiliation
Papers
BYUNG-KYU HO
Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea
1
Collaborators
Citations
PageRank
25
1
0.37
Referers
Referees
References
5
48
6
Publications (1 rows)
Collaborators (25 rows)
Referers (5 rows)
Referees (48 rows)
Title
Citations
PageRank
Year
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme
1
0.37
2021
1