Title | ||
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A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme |
Abstract | ||
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Circuit and design techniques are presented for enhancing the performance and reliability of a 3-D-stacked high bandwidth memory-2 extension (HBM2E). A data-bus window extension technique is implemented to cope with reduced clock cycle time ranging from data-path architecture, through-silicon via (TSV) placement, and TSV-PHY alignment. A power TSV placement in the middle of array and at the chip edge along with a dedicated top metal for power mesh improves power IR drop by 62%. An on-die ECC (OD-ECC) scheme featuring a self-scrubbing function is designed to be orthogonal to system ECC. An uncorrectable bit error rate (UBER) is improved by 10
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup>
times with the proposed OD-ECC and scrubbing scheme. A memory built-in self-test (MBIST) block supports low-frequency cell and core test in a parallel manner and all channel at-speed operation with adjustable ac parameters. The proposed parallel-bit MBIST reduces test time by 66%. A 16-GB HBM2E fabricated in the second generation of 10-nm class DRAM process achieves a bandwidth up to 640 GB/s (5 Gb/s/pin) and provides a stable bit-cell operation at a high temperature (e.g., 105 ° C). |
Year | DOI | Venue |
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2021 | 10.1109/JSSC.2020.3027360 | IEEE Journal of Solid-State Circuits |
Keywords | DocType | Volume |
3-D-stacked memory,built-in self-test (BIST),data bus,high bandwidth memory (HBM),on-die ECC (OD-ECC),power delivery network (PDN),through-silicon via (TSV) | Journal | 56 |
Issue | ISSN | Citations |
1 | 0018-9200 | 1 |
PageRank | References | Authors |
0.37 | 6 | 26 |
Name | Order | Citations | PageRank |
---|---|---|---|
Ki Chul Chun | 1 | 1 | 0.37 |
Yong Ki Kim | 2 | 1 | 0.37 |
Yesin Ryu | 3 | 2 | 1.55 |
Jaewon Park | 4 | 1 | 1.73 |
Chi Sung Oh | 5 | 93 | 8.94 |
Young Yong Byun | 6 | 1 | 0.37 |
Soyoung Kim | 7 | 168 | 22.15 |
Dong Hak Shin | 8 | 1 | 0.37 |
Jun Gyu Lee | 9 | 1 | 0.37 |
Byung-Kyu Ho | 10 | 1 | 0.37 |
Sang-Min Park | 11 | 223 | 21.45 |
Seong Jin Cho | 12 | 6 | 3.28 |
Seunghan Woo | 13 | 1 | 0.37 |
Byoung Mo Moon | 14 | 1 | 0.71 |
Beomyong Kil | 15 | 1 | 0.37 |
Sungoh Ahn | 16 | 1 | 1.05 |
Jae Hoon Lee | 17 | 176 | 37.92 |
Sooyoung Kim | 18 | 225 | 38.24 |
Seouk-Kyu Choi | 19 | 1 | 0.71 |
Jae-Seung Jeong | 20 | 1 | 0.37 |
Sung-Gi Ahn | 21 | 1 | 0.37 |
Jihye Kim | 22 | 1 | 0.37 |
Jun Jin Kong | 23 | 1 | 0.37 |
Kyomin Sohn | 24 | 1 | 0.71 |
Nam Sung Kim | 25 | 3268 | 225.99 |
Jung-Bae Lee | 26 | 1 | 0.71 |