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BINGXU NING
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Papers
BINGXU NING
Corresponding author. Tel.: +86 21 62511070 8612.
9
Collaborators
Citations
PageRank
15
10
4.47
Referers
Referees
References
38
44
12
Publications (9 rows)
Collaborators (15 rows)
Referers (38 rows)
Referees (44 rows)
Title
Citations
PageRank
Year
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.
0
0.34
2016
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.
3
0.83
2014
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.
2
0.49
2013
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.
0
0.34
2013
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.
1
0.48
2012
Comparison of TID response in core, input/output and high voltage transistors for flash memory
1
0.37
2011
The impact of total ionizing radiation on body effect
0
0.34
2011
Impact of within-wafer process variability on radiation response
1
0.69
2011
Total ionizing dose effects in elementary devices for 180-nm flash technologies
2
0.60
2011
1