Name
Abstract | ||
|---|---|---|
A new phenomenon, for the first time, shows that radiation-induced body effect factor decrease in NMOS transistors is presented. The results indicate that body effect factor shift decreases as the total ionizing dose (TID) level increases in NMOS transistors, especially in the narrow-channel ones, which can be considered as one of the radiation-induced narrow-channel effect (RINCE). A first-order model is developed by applying charge conservation principle. Good agreement is obtained by comparing the modeling with experimental results. Finally, some implications to mitigate the RINCE effect are discussed. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.mejo.2011.09.004 | Microelectronics Journal |
Keywords | Field | DocType |
radiation-induced narrow-channel effect,radiation-induced body effect factor,total ionizing radiation,charge conservation principle,body effect factor shift,nmos transistor,good agreement,level increase,rince effect,first-order model,ionizing radiation,total ionizing dose,first order | Absorbed dose,Charge conservation,NMOS logic,Nuclear physics,Transistor,Ionizing radiation,Physics | Journal |
Volume | Issue | ISSN |
42 | 12 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Bingxu Ning | 1 | 10 | 4.47 |
| Zhiyuan Hu | 2 | 33 | 12.91 |
| Zhengxuan Zhang | 3 | 15 | 8.64 |
| Zhangli Liu | 4 | 3 | 1.42 |
| Ming Chen | 5 | 7 | 3.30 |
| Dawei Bi | 6 | 10 | 6.16 |
| Shichang Zou | 7 | 20 | 12.47 |