| A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology | 0 | 0.34 | 2013 |
| 128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. | 4 | 0.69 | 2012 |
| A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. | 4 | 0.78 | 2008 |
| A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. | 0 | 0.34 | 2008 |
