A 130.7-Mm(2) 2-Layer 32-Gb Reram Memory Device In 24-Nm Technology | 20 | 2.52 | 2014 |
A 130.7mm2 2-layer 32Gb ReRAM memory device in 24nm technology | 0 | 0.34 | 2013 |
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface. | 0 | 0.34 | 2012 |
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. | 4 | 0.69 | 2012 |
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. | 0 | 0.34 | 2011 |
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. | 4 | 0.78 | 2008 |
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. | 4 | 1.56 | 2008 |
A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. | 0 | 0.34 | 2008 |
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput | 9 | 10.18 | 2007 |
A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology | 9 | 2.72 | 2006 |