Author Info
Name
Affiliation
Papers
HUIXIANG HUANG
The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
5
Collaborators
Citations 
PageRank 
11
5
2.33
Referers 
Referees 
References 
16
35
6
Title
Citations
PageRank
Year
Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation.00.342016
Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.00.342014
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.30.832014
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.20.492013
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.00.342013