Name
Title | ||
|---|---|---|
Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment. |
Abstract | ||
|---|---|---|
We have analyzed total ionizing dose response of partially depleted SOI nMOSFETs fabricated in a 0.13μm commercial technology assisted by TCAD simulation. Using TCAD tools, the ionizing radiation-induced damages in buried oxide and shallow-trench oxide are investigated separately. It is shown that back transistors are radiation tolerant up to 1Mrad (Si) for core nMOSFETs even under the worst case whereas back transistors of I/O devices are 100krad (Si) due to lower doping concentration. In addition, the enhanced total dose degradation with applied gate bias is attributed to more charge trapped in shallow-trench oxide. 2D cross section electrical simulation schematically illustrates the evolution of charge trapping in buried oxide and shallow-trench oxide. It is found and verified that parasitic corner transistor located at the bottom of swallow-trench oxide plays a critical role on the radiation hardness of partially depleted SOI nMOSFETs. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.mejo.2014.04.027 | Microelectronics Journal |
Keywords | Field | DocType |
Total dose effects,Shallow trench oxide,TCAD simulation,Silicon-on-insulator | Silicon on insulator,Absorbed dose,Oxide,Doping,Electronic engineering,Engineering,Transistor,Radiation hardening,Radiation,Ionizing radiation | Journal |
Volume | Issue | ISSN |
45 | 6 | 0026-2692 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Huixiang Huang | 1 | 5 | 2.33 |
| Dawei Bi | 2 | 10 | 6.16 |
| Zhengxuan Zhang | 3 | 15 | 8.64 |