| 13.5 A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology | 4 | 0.43 | 2019 |
| 128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. | 4 | 0.69 | 2012 |
| A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. | 0 | 0.34 | 2008 |
