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CHULBUM KIM
Author Info
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Name
Affiliation
Papers
CHULBUM KIM
Samsung Elect, Semicond Div, Hwasung City 445701, Gyeonggi Do, South Korea
3
Collaborators
Citations
PageRank
63
26
2.15
Referers
Referees
References
93
3
1
Publications (3 rows)
Collaborators (63 rows)
Referers (93 rows)
Referees (3 rows)
Title
Citations
PageRank
Year
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
6
0.51
2017
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
20
1.29
2012
A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface
0
0.34
2010
1
