Author Info
Name
Affiliation
Papers
J.L. OGIER
ST Microelectronics, RCCAL, ZI de Rousset BP 2, 13106, Rousset, France
4
Collaborators
Citations 
PageRank 
10
3
1.80
Referers 
Referees 
References 
10
20
5
Title
Citations
PageRank
Year
Assessment of temperature and voltage accelerating factors for 2.3–3.2nm SiO2 thin oxides stressed to hard breakdown10.472008
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications00.342008
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories10.472007
A new method to quantify retention-failed cells of an EEPROM CAST10.522007