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J.L. OGIER
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Name
Affiliation
Papers
J.L. OGIER
ST Microelectronics, RCCAL, ZI de Rousset BP 2, 13106, Rousset, France
4
Collaborators
Citations
PageRank
10
3
1.80
Referers
Referees
References
10
20
5
Publications (4 rows)
Collaborators (10 rows)
Referers (10 rows)
Referees (20 rows)
Title
Citations
PageRank
Year
Assessment of temperature and voltage accelerating factors for 2.3–3.2nm SiO2 thin oxides stressed to hard breakdown
1
0.47
2008
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications
0
0.34
2008
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories
1
0.47
2007
A new method to quantify retention-failed cells of an EEPROM CAST
1
0.52
2007
1