Jong Tae Park - Citegraph

Author Info

Name	Affiliation	Papers
JONG TAE PARK	Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea	31
Collaborators	Citations	PageRank
64	27	12.40
Referers	Referees	References
81	172	64

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100172

Publications (31 rows)

Collaborators (64 rows)

Referers (81 rows)

Referees (100 rows)

Title	Citations	PageRank	Year
Thermal energy harvesting circuit with maximum power point tracking control for self-powered sensor node applications.	1	0.36	2018
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.	0	0.34	2018
Secure Mobility Management Using CoAP in the Internet of Things	0	0.34	2018
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer.	0	0.34	2017
Design and implementation of an interoperable messaging system for IoT healthcare services	0	0.34	2017
Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors.	0	0.34	2017
A Mechanism for Reliable Mobility Management for Internet of Things Using CoAP.	1	0.38	2017
Nanowire width dependence of data retention and endurance characteristics in nanowire SONOS flash memory.	0	0.34	2016
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain.	0	0.34	2016
Design and implementation of interoperable IoT healthcare system based on international standards	2	0.45	2016
Device instability of amorphous InGaZnO thin film transistors with transparent source and drain.	0	0.34	2016
Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors.	0	0.34	2016
Wire width dependence of hot carrier degradation in silicon nanowire gate-all-around MOSFETs	0	0.34	2015
Mobile CoAP for IoT mobility management	4	0.44	2015
Effect of source and drain asymmetry on hot carrier degradation in vertical nanowire MOSFETs	0	0.34	2015
Investigation on stress induced hump phenomenon in IGZO thin film transistors under negative bias stress and illumination	0	0.34	2015
Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs.	1	0.63	2014
Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model.	2	0.41	2012
Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods.	3	0.51	2012
The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation	0	0.34	2010
NBTI and hot carrier effect of Schottky-barrier p-MOSFETs	0	0.34	2010
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer	1	0.37	2009
NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs	2	0.67	2009
Dynamic Path Management with Resilience Constraints under Multiple Link Failures in MPLS/GMPLS Networks	1	0.35	2008
Hierarchical mobile network binding scheme for route optimization in NEMO	8	0.62	2007
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs	0	0.34	2007
New experimental findings on hot-carrier-induced degradation in lateral DMOS transistors	0	0.34	2006
Reliability improvement by the suppression of keyhole generation in W-plug vias	0	0.34	2005
Panel two: Ubiquitous computing and communications: challenges in the management of ubiquitous computing and communication	0	0.34	2004
Hot electron induced punchthrough voltage of p-channel SOI MOSFET’s at room and elevated temperatures	0	0.34	2003
Increased hot carrier effects in Gate-All-Around SOI nMOSFET’s	1	0.79	2003