Name
Abstract | ||
|---|---|---|
Comparative study on NBTI and hot carrier effects of p-channel MOSFETs fabricated by using strained SOI wafer and unstrained SOI wafer has been performed, respectively. It is observed that NBTI and hot carrier degradation are more significant in strained SOI devices compared with unstrained SOI devices. Since the devices fabricated in strained SOI wafer are SiGe free strained devices, the more generation of interface states during gate oxidation is the main cause for enhanced NBTI and hot carrier degradation in strained SOI devices. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1016/j.microrel.2009.06.015 | Microelectronics Reliability |
Keywords | Field | DocType |
comparative study | Silicon on insulator,Wafer,Hot carrier degradation,Electric stress,Electronic engineering,Hot carrier effect,Stress (mechanics),Negative-bias temperature instability,Engineering,MOSFET | Journal |
Volume | Issue | ISSN |
49 | 9 | 0026-2714 |
Citations | PageRank | References |
1 | 0.37 | 2 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yong Woo Jeon | 1 | 1 | 0.37 |
| Dae Hyun Ka | 2 | 1 | 0.71 |
| Chong Gun Yu | 3 | 4 | 3.83 |
| Won-Ju Cho | 4 | 2 | 4.38 |
| M. Saif Islam | 5 | 1 | 1.38 |
| Jong Tae Park | 6 | 27 | 12.40 |