Author Info
Name
Affiliation
Papers
DAE HYUN KA
Department of Electronics Engineering, University of Incheon, #177 Dohwa-Dong Nam-Gu, Incheon 402-749, Republic of Korea
2
Collaborators
Citations 
PageRank 
7
1
0.71
Referers 
Referees 
References 
1
5
2
Title
Citations
PageRank
Year
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer10.372009
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs00.342007