Name
Affiliation
Papers
ANDREI VLADIMIRESCU
Univ Calif Berkeley, Berkeley, CA 94720 USA
40
Collaborators
Citations 
PageRank 
83
155
37.87
Referers 
Referees 
References 
475
328
127
Search Limit
100475
Title
Citations
PageRank
Year
Voltage-to-Voltage Sigmoid Neuron Activation Function Design for Artificial Neural Networks00.342022
Energy Efficient Comparator-Less Current-Mode TFET-CMOS Co-Integrated Scalable Flash ADC00.342021
On Improving 5g Internet Of Radio Light Security Based On Led Fingerprint Identification Method00.342021
Effect of Illumination Intensity on LED Based Visible Light Communication System00.342020
Cryo-CMOS for Analog/Mixed-Signal Circuits and Systems00.342020
The Synergy SPICE – Compact Models00.342019
SPINE (SPIN Emulator) - A Quantum-Electronics Interface Simulator00.342019
Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures10.362019
PAPR reduction based on deep autoencoder for VLC DCO-OFDM system10.352019
Cryo-CMOS Circuits and Systems for Quantum Computing Applications.181.632018
Experimental 5G New Radio integration with VLC10.382018
A Co-Design Methodology For Scalable Quantum Processors And Their Classical Electronic Interface00.342018
Cryo-CMOS Electronic Control for Scalable Quantum Computing: Invited.30.492017
1.56GHz/0.9V energy-efficient reconfigurable CAM/SRAM using 6T-CMOS bitcell.00.342017
Process and temperature impact on single-event transients in 28nm FDSOI CMOS10.632017
Tunnel FET based refresh-free-DRAM.00.342017
Cryogenic CMOS interfaces for quantum devices00.342017
Evaluation of heavy-ion impact in bulk and FDSOI devices under ZTC condition.00.342017
TFET NDR skewed inverter based sensing method00.342016
3T-TFET bitcell based TFET-CMOS hybrid SRAM design for Ultra-Low Power applications00.342016
A fast, flexible, positive and negative adaptive body-bias generator in 28nm FDSOI.30.442016
Ultra-Low-Power compact TFET Flip-Flop design for high-performance low-voltage applications00.342016
FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects.00.342016
Modeling the impact of heavy ion on FDSOI NanoCMOS11.082015
Ultra-Low Leakage Sub-32nm Tfet/Cmos Hybrid 32kb Pseudo Dual-Port Scratchpad With Ghz Speed For Embedded Applications40.542015
Sub-picowatt retention mode TFET memory for CMOS sensor processing nodes00.342015
Bulk and FDSOI Sub-micron CMOS transistors resilience to single-event transients10.872015
Design considerations for low-noise transconductance amplifiers in 28nm UTBB-FDSOI00.342015
CMOS SRAM scaling limits under optimum stability constraints30.812013
A 32nm Tunnel Fet Sram For Ultra Low Leakage00.342012
Stability and yield-oriented ultra-low-power embedded 6T SRAM cell design optimization30.712012
Sram Voltage And Current Sense Amplifiers In Sub-32nm Double-Gate Cmos Insensitive To Process Variations And Transistor Mismatch10.422009
An innovative sub-32nm SRAM voltage sense amplifier in double-gate CMOS insensitive to process variations and transistor mismatch.00.342008
Numerical methods for simulation of guitar distortion circuits111.592008
A Comparative Study of 6T and 4T SRAM Cells in Double-Gate CMOS with Statistical Variation61.162007
Analog circuit synthesis using standard EDA tools20.422006
Standby supply voltage minimization for deep sub-micron SRAM161.952005
Modeling subthreshold SOI logic for static timing analysis60.982004
SRAM leakage suppression by minimizing standby supply voltage7315.982004
Automated Design Methodology for CMOS Analog Circuit Blocks in Complex Systems00.342002