Author Info
Name
Affiliation
Papers
SUA KIM
DRAM Design Team, Samsung Electron. Co., Gyeonggi-Do, South Korea
2
Collaborators
Citations 
PageRank 
24
5
1.59
Referers 
Referees 
References 
27
19
5
Title
Citations
PageRank
Year
A 31 ns Random Cycle VCAT-Based 4F DRAM With Manufacturability and Enhanced Cell Efficiency10.632010
A 4-Gb/s/pin low-power memory I/O interface using 4-level simultaneous bi-directional signaling40.962005