Name
Title | ||
|---|---|---|
A 31 ns Random Cycle VCAT-Based 4F DRAM With Manufacturability and Enhanced Cell Efficiency |
Abstract | ||
|---|---|---|
A functional 4F2 DRAM was implemented based on the technology combination of stack capacitor and surrounding-gate vertical channel access transistor (VCAT). A high performance VCAT has been developed showing excellent Ion-Ioff characteristics with more than twice turn-on current compared with the conventional recessed channel access transistor (RCAT). A new design methodology has been applied to accommodate 4F2 cell array, achieving both high performance and manufacturability. Especially, core block restructuring, word line (WL) strapping and hybrid bit line (BL) sense-amplifier (SA) scheme play an important role for enhancing AC performance and cell efficiency. A 50 Mb test chip was fabricated by 80 nm design rule and the measured random cycle time (tRC) and read latency (tRCD) are 31 ns and 8 ns, respectively. The median retention time for 88 Kb sample array is about 30 s at 90°C under dynamic operations. The core array size is reduced by 29% compared with conventional 6F2 DRAM. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1109/JSSC.2010.2040229 | Solid-State Circuits, IEEE Journal of |
Keywords | Field | DocType |
DRAM chips,capacitors,transistors,DRAM,cell array,core block restructuring,hybrid bit line sense-amplifier scheme,random cycle time,read latency time,recessed channel access transistor,size 80 nm,stack capacitor,temperature 90 C,time 31 ns,time 8 ns,vertical channel access transistor,word line strapping,4F $^{2}$,DRAM,cell efficiency,core architecture,hybrid sense-amplifier (SA),stack capacitor,surrounding-gate vertical channel access transistor (VCAT) | Sense amplifier,Dram,Dynamic random-access memory,Computer science,Chip,Electronic engineering,Non-volatile memory,Transistor,Integrated circuit,Design for manufacturability | Journal |
Volume | Issue | ISSN |
45 | 4 | 0018-9200 |
Citations | PageRank | References |
1 | 0.63 | 0 |
Authors | ||
21 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ki-Whan Song | 1 | 58 | 9.66 |
| Jinyoung Kim | 2 | 126 | 10.45 |
| Jae-Man Yoon | 3 | 1 | 0.63 |
| Sua Kim | 4 | 5 | 1.59 |
| Huijung Kim | 5 | 23 | 3.07 |
| Hyun-Woo Chung | 6 | 1 | 0.96 |
| Hyungi Kim | 7 | 1 | 0.96 |
| Kanguk Kim | 8 | 1 | 0.63 |
| Hwanwook Park | 9 | 11 | 3.15 |
| Hyun Chul Kang | 10 | 1 | 0.63 |
| Nam-Kyun Tak | 11 | 1 | 0.63 |
| Duk-Ha Park | 12 | 187 | 13.64 |
| Woo-Seop Kim | 13 | 258 | 24.43 |
| Yeong-Taek Lee | 14 | 119 | 12.70 |
| Yong Chul Oh | 15 | 1 | 0.96 |
| Gyo-Young Jin | 16 | 16 | 5.43 |
| Jeihwan Yoo | 17 | 381 | 29.63 |
| Donggun Park | 18 | 2 | 1.55 |
| Kyungseok Oh | 19 | 28 | 2.82 |
| Changhyun Kim | 20 | 470 | 151.39 |
| Young-Hyun Jun | 21 | 1 | 0.63 |