Hyun-geun Byun - Citegraph

Author Info

Name	Affiliation	Papers
HYUN-GEUN BYUN	Samsung Elect, Hwasung City, South Korea	8
Collaborators	Citations	PageRank
56	34	16.20
Referers	Referees	References
170	28	6

Search Limit

100170

Publications (8 rows)

Collaborators (56 rows)

Referers (100 rows)

Referees (28 rows)

Title	Citations	PageRank	Year
A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy.	0	0.34	2008
A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM	6	0.56	2006
A High Resolution, Wide Range Digital Impedance Controller	0	0.34	2005
A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)	19	12.30	2005
A Low Jitter Adpll For Mobile Applications	1	0.38	2005
Programmable And Automatically Adjustable On-Die Terminator For Ddr3-Sram Interface	3	0.87	2003
A 1.2-V 1.5-Gb/s 72-Mb DDR3 SRAM	5	1.07	2003
New dynamic logic-level converters for high performance application	0	0.34	2003

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