Author Info
Name
Affiliation
Papers
BEOM JUN JIN
Semiconductor R&D Center, Samsung Electronics Co. Ltd. San #24, Nongseo-Ree, Kihung-Eup, Yongin-City, Kyonggi-Do, 449-900, South Korea
1
Collaborators
Citations 
PageRank 
4
0
0.34
Referers 
Referees 
References 
0
0
0
Title
Citations
PageRank
Year
Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs00.342001