Author Info
Name
Affiliation
Papers
WON-JU CHO
Dept. of Electronic Materials Eng., Kwangwoon University, #447-1 Wolgye-Dong, Nowon-Gu, Seoul, Republic of Korea
12
Collaborators
Citations 
PageRank 
35
2
4.38
Referers 
Referees 
References 
13
11
6
Title
Citations
PageRank
Year
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.00.342018
Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget.00.342018
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer.00.342017
Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors.00.342017
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain.00.342016
Device instability of amorphous InGaZnO thin film transistors with transparent source and drain.00.342016
Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.00.342012
Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics.10.632012
NBTI and hot carrier effect of Schottky-barrier p-MOSFETs00.342010
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer10.372009
Electrical Characterization Of Nano-Floating Gated Silicon-On-Insulator Memory With In2o3 Nano-Particles Embedded In Polyimide Insulator00.342008
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs00.342007