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TAKEO HATTORI
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Name
Affiliation
Papers
TAKEO HATTORI
Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
3
Collaborators
Citations
PageRank
18
0
1.01
Referers
Referees
References
0
0
0
Publications (3 rows)
Collaborators (18 rows)
Referers (0 rows)
Referees (0 rows)
Title
Citations
PageRank
Year
Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise
0
0.34
2011
Advantage of further scaling in gate dielectrics below 0.5nm of equivalent oxide thickness with La2O3 gate dielectrics
0
0.34
2010
SrO capping effect for La2O3/Ce-silicate gate dielectrics
0
0.34
2010
1
