Name
Abstract | ||
|---|---|---|
The chemical bonding states and electrical characteristics of SrO capped La2O3/CeOx gate dielectric have been examined. Angle-resolved X-ray photoelectron spectroscopy measurement has revealed that Sr atoms diffuse into silicate layer to form SrLa-silicate after annealing. Owing to the incorporation of Sr atoms into silicate layer, a transistor operation with an equivalent oxide thickness (EOT) below 0.5nm has been demonstrated. A strongly degraded effective electron mobility of 78cm2/Vs at 1MV/cm has been obtained, which fit well with the general trend in small EOT range below 1nm. Although process optimization is needed to improve the performance of transistors, Sr capping technique can be useful for EOT scaling. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2009.12.004 | Microelectronics Reliability |
Keywords | Field | DocType |
process optimization,x ray photoelectron spectroscopy,equivalent oxide thickness | Equivalent oxide thickness,Analytical chemistry,Dielectric,Chemistry,Electronic engineering,Gate dielectric,Annealing (metallurgy),Silicate,Chemical bond,X-ray photoelectron spectroscopy,Electron mobility | Journal |
Volume | Issue | ISSN |
50 | 3 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
13 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kuniyuki Kakushima | 1 | 0 | 1.35 |
| K. Okamoto | 2 | 0 | 0.34 |
| T. Koyanagi | 3 | 0 | 0.34 |
| M. Kouda | 4 | 0 | 0.34 |
| K. Tachi | 5 | 0 | 0.68 |
| T. Kawanago | 6 | 0 | 0.34 |
| J. Song | 7 | 0 | 0.34 |
| Parhat Ahmet | 8 | 0 | 1.01 |
| H. Nohira | 9 | 0 | 0.68 |
| Kazuo Tsutsui | 10 | 0 | 1.01 |
| Nobuyuki Sugii | 11 | 4 | 5.26 |
| Takeo Hattori | 12 | 0 | 1.01 |
| Hiroshi Iwai | 13 | 0 | 1.01 |