Author Info
Name
Affiliation
Papers
SANGWAN NAM
Samsung Elect Co Ltd, Memory Business, Flash Design Team, Gyeonggi Do 445330, South Korea
5
Collaborators
Citations 
PageRank 
100
25
3.12
Referers 
Referees 
References 
140
61
2
Search Limit
100140
Title
Citations
PageRank
Year
A 512gb 3b/Cell 7th-Generation 3d-Nand Flash Memory With 184mb/S Write Throughput And 2.0gb/S Interface00.342021
A 128 Gb 3b/Cell V-Nand Flash Memory With 1 Gb/S I/O Rate00.342016
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate90.812015
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming120.802015
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming40.832014