30% static power improvement on ARM Cortex®-A53 using static biasing-anticipation. | 0 | 0.34 | 2016 |
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs | 1 | 0.37 | 2015 |
8.4 A 0.33V/-40°C process/temperature closed-loop compensation SoC embedding all-digital clock multiplier and DC-DC converter exploiting FDSOI 28nm back-gate biasing | 17 | 1.30 | 2015 |
28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors. | 2 | 0.40 | 2015 |
A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance | 1 | 0.40 | 2012 |