Author Info
Name
Affiliation
Papers
NAYOUNG CHOI
Samsung Electronics, Hwaseong, Korea
5
Collaborators
Citations 
PageRank 
81
41
4.24
Referers 
Referees 
References 
226
129
9
Search Limit
100226
Title
Citations
PageRank
Year
Modeling and Simulation of NAND Flash Memory Sensing Systems with Cell-to-Cell Vth Variations00.342020
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.90.552018
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers60.512017
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory90.922017
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers171.922016