Author Info
Name
Affiliation
Papers
GONG-HEUM HAN
Samsung Electronics, Hwasung, Korea
3
Collaborators
Citations 
PageRank 
107
0
1.01
Referers 
Referees 
References 
0
24
1
Search Limit
100107
Title
Citations
PageRank
Year
A 16Gb 9.5Gb/S/pin LPDDR5X SDRAM With Low-Power Schemes Exploiting Dynamic Voltage-Frequency Scaling and Offset-Calibrated Readout Sense Amplifiers in a Fourth Generation 10nm DRAM Process.00.342022
A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking.00.342019
23.4 An extremely low-standby-power 3.733Gb/s/pin 2Gb LPDDR4 SDRAM for wearable devices.00.342017