Lihua Dai - Citegraph

Author Info

Name	Affiliation	Papers
LIHUA DAI	The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China	4
Collaborators	Citations	PageRank
13	1	1.40
Referers	Referees	References
5	24	5

Publications (4 rows)

Collaborators (13 rows)

Referers (5 rows)

Referees (24 rows)

Title	Citations	PageRank	Year
Electrical performance of 130 nm PD-SOI MOSFET with diamond layout	1	0.39	2020
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology.	0	0.34	2017
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.	0	0.34	2017
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.	0	0.34	2016

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