Title | ||
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Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. |
Abstract | ||
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Hot-carrier reliability for devices operating in radiation environment must be considered. In this paper, we investigate how total ionizing dose impacts the hot-carrier reliability of partially-depleted SOI I/O NMOSFETs, highlighting the effect of buried oxide. Firstly, radiation-induced damage on short channel SOI devices with 100nm thick Si film was investigated. After low total dose irradiation, incomplete fully-depleted state has been formed due to the non-uniformly distributed positive charges in the buried oxide. Furthermore, as the dominated factor of hot-carrier injection, the body current reduces after irradiation. Subsequently, the irradiated SOI devices were subjected to hot-carrier stress for 9000-s long time. Compared with unirradiated devices, the irradiated samples display enhanced hot-carrier degradation. We attribute this phenomenon to that radiation lowers the barrier for hot-carrier injection. Therefore, in order to ensure the reliability of SOI devices operating in harsh radiation environments, SOI devices with higher quality or corresponding hardness design should be taken. |
Year | DOI | Venue |
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2017 | 10.1016/j.microrel.2017.05.021 | Microelectronics Reliability |
Keywords | Field | DocType |
Partially-depleted SOI,Total ionizing dose,Hot-carrier degradation,Buried oxide | Silicon on insulator,Absorbed dose,Irradiation,Communication channel,Buried oxide,Degradation (geology),Electronic engineering,Engineering,Radiation,Hot carrier stress | Journal |
Volume | ISSN | Citations |
74 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 3 | 8 |
Name | Order | Citations | PageRank |
---|---|---|---|
Lihua Dai | 1 | 1 | 1.40 |
Xiaonian Liu | 2 | 3 | 1.45 |
Mengying Zhang | 3 | 8 | 6.72 |
Leqing Zhang | 4 | 0 | 0.34 |
Zhiyuan Hu | 5 | 33 | 12.91 |
Dawei Bi | 6 | 10 | 6.16 |
Zhengxuan Zhang | 7 | 15 | 8.64 |
Shichang Zou | 8 | 20 | 12.47 |