Author Info
Name
Affiliation
Papers
JUNG-BAE LEE
Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea
2
Collaborators
Citations 
PageRank 
51
1
0.71
Referers 
Referees 
References 
5
125
14
Search Limit
100125
Title
Citations
PageRank
Year
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme10.372021
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques00.342021