Name
Abstract | ||
|---|---|---|
Resistive switching of metal-insulator-metal (MIM), consisting of a metal-organic chemical vapour deposition (MOCVD) TiO2 layer sandwiched between Pt electrodes, has been measured systematically before and after thermal annealing in different ambiences. With H-2 annealing at 400 degrees C, the current level in the high-resistive state (FIRS) significantly decreased while little change in the low-resistive state (LRS) was observed. As a result, the switching ratio over 7 orders of magnitude at the current level was obtained. From the analysis of current-voltage (I-V) characteristics in HRS and LRS, we found that the LRS was characterized with an ohmic conduction, while in the HRS after H-2 annealing, charge trapping became significant as a result of a significant decrease in the current level. In a separate experiment, a partial reduction in TiO2 was detected using high-resolution X-ray photoelectron spectroscopy (XPS) after resistant-state switching from HRS to LRS by using a Hg probe as a top electrode, which is associated with filament formation. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1587/transele.E94.C.699 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
ReRAM, TiO2, low temperature, H-2 annealing, charge trapping | Journal | E94C |
Issue | ISSN | Citations |
5 | 1745-1353 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Guobin Wei | 1 | 3 | 1.63 |
| Yuta Goto | 2 | 3 | 1.63 |
| Akio Ohta | 3 | 4 | 3.52 |
| Katsunori Makihara | 4 | 4 | 6.33 |
| Hideki Murakami | 5 | 9 | 6.82 |
| Seiichiro Higashi | 6 | 4 | 4.20 |
| Seiichi Miyazaki | 7 | 8 | 10.52 |