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SEIICHIRO HIGASHI
Author Info
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Name
Affiliation
Papers
SEIICHIRO HIGASHI
Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398530, Japan
9
Collaborators
Citations
PageRank
17
4
4.20
Referers
Referees
References
12
7
1
Publications (9 rows)
Collaborators (17 rows)
Referers (12 rows)
Referees (7 rows)
Title
Citations
PageRank
Year
Evaluation Of Chemical Composition And Bonding Features Of Pt/Siox/Pt Mim Diodes And Its Impact On Resistance Switching Behavior
1
0.54
2013
Control Of Interfacial Reaction Of Hfo2/Ge Structure By Insertion Of Ta Oxide Layer
0
0.34
2013
Characterization Of Resistance-Switching Of Si Oxide Dielectrics Prepared By Rf Sputtering
3
1.29
2012
Characterization Of Mg Diffusion Into Hfo2/Sio2/Si(100) Stacked Structures And Its Impact On Detect State Densities
0
0.34
2011
Impact Of Annealing Ambience On Resistive Switching In Pt/Tio2/Pt Structure
0
0.34
2011
Progress On Charge Distribution In Multiply-Stacked Si Quantum Dots/Sio2 Structure As Evaluated By Afm/Kfm
0
0.34
2008
Evaluation Of Dielectric Reliability Of Ultrathin Hfsioxny In Metal-Gate Capacitors
0
0.34
2007
Characterization Of Atom Diffusion In Polycrystalline Si/Sige/Si Stacked Gate
0
0.34
2005
Characterization Of Germanium Nanocrystallites Grown On Sio2 By A Conductive Afm Probe Technique
0
0.34
2005
1