Paper Info
Title
Oxide-Tunneling Leakage Suppressed Sram For Sub-65-Nm Very Large Scale Integrated Circuits
Abstract
In this paper, a new low-swing wordline is proposed in order to reduce the oxide-tunneling leakage that is important in sub-65-nm SRAMs. This new wordline driver circuit turns off the wordline by using a higher voltage than the VSS, relaxing the oxide stress of the access transistor. By simulating a 65-nm device using the Predictive Technology Model, this scheme was verified to be helpful in reducing not only the oxide-tunneling but also the subthreshold leakage. The simulation indicates that the total leakage is reduced by 10.3%, 18.5%, and 37.9% at the temperatures of 75 degrees C, 25 degrees C, and-25 degrees C, respectively. The read power is reduced by 11.2%, 12.1%, and 12.4% at the temperatures of 75 degrees C, 25 degrees C, and -25 degrees C, respectively. The write power is reduced by as much as 31.0%, 33.4%, and 34.8% at the temperatures of 75 degrees C, 25 degrees C, and -25 degrees C, respectively. A new low-swing wordline driver is proposed in order to minimize the delay penalty of the low-swing wordline to less than 1% at a temperature of 25 degrees C. Similarly, a new low-swing write driver is also proposed with the small delay overhead of 2% at a temperature of 25 degrees C.
Year
DOI
Venue
2011
10.1166/jolpe.2011.1119
JOURNAL OF LOW POWER ELECTRONICS
Keywords
Field
DocType
Low-Power SRAM, Subthreshold Leakage, Oxide-Tunneling Leakage, Low-Swing Write, Low-Swing Wordline
Leakage (electronics),Driver circuit,Voltage,Electronic engineering,Static random-access memory,Non-volatile memory,Subthreshold conduction,Engineering,Transistor,Low-power electronics
Journal
Volume
Issue
ISSN
7
1
1546-1998
Citations 
PageRank 
References 
0
0.34
0
Authors
4
Name
Order
Citations
PageRank
Ji-Hye Bong182.88
Kwan-Hee Jo241.42
Kyeong-Sik Min300.34
Sung-Mo Steve Kang41198213.14