Title | ||
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Long-Retention-Time, High-Speed Dram Array With 12-F-2 Twin Cell For Sub 1-V Operation |
Abstract | ||
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DRAM-cell array with 12-F-2 twin cell was developed and evaluated in terms of speed, retention time, and low-voltage operation. The write and read-out times of the twin-cell array are shorter than those of a single-cell array by 70% and 40% respectively, because of parallel writing and reading of half charge to and from two memory cells. According to measured retention characteristics of the single cells, the twin-cell array improves retention time by 20% compared with the single-cell array at I V and keeps the retention time of the single-cell array at 0.4 V. Furthermore, the cell accepts the plate-driven scheme without the need of a dummy cell, lowering the necessary word-line voltage by 0.4 V. |
Year | DOI | Venue |
---|---|---|
2007 | 10.1093/ietele/e90-c.4.758 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
twin-cell DRAM array, write time, low voltage RAM, retention time, and plate-driven cell | Journal | E90C |
Issue | ISSN | Citations |
4 | 1745-1353 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Riichiro Takemura | 1 | 44 | 26.44 |
Kiyoo Itoh | 2 | 78 | 23.29 |
Tomonori Sekiguchi | 3 | 17 | 3.74 |
Satoru Akiyama | 4 | 0 | 1.35 |
Satoru Hanzawa | 5 | 19 | 6.53 |
Kazuhiko Kajigaya | 6 | 0 | 1.01 |
Takayuki Kawahara | 7 | 318 | 103.32 |