Name
Abstract | ||
|---|---|---|
Radiation-induced soft error rate (SER) degrades the reliability of static random access memory (SRAM)-based field programmable gate arrays (FPGAs). This paper presents a new built-in 2-D Hamming product code (2-D HPC) scheme to provide reliable operation of SRAM-based FPGAs in hostile operating environments such as space. Multibit error correction capability of our built-in 2-D HPC can improve the reliability, and hence, system availability, by orders of magnitude. Simulation results show that the large number of error correction capability of 2-D HPC can recover configuration bits without depending on an external memory preserving a golden copy of the configuration bits. To provide efficient 2-D HPC in a built-in logic, we also propose a new 2-D SRAM buffer. Using the proposed multibit error correction scheme, system availability of an SRAM-based FPGA can be more than 99.9999999% with SRAM cell failures in 1 billion h of operation of 7. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/TVLSI.2010.2095435 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
configuration bit,multibit error correction capability,built-in 2-d hamming product,2-d hamming product code,2-d sram buffer,built-in 2-d hpc,sram chips,2d sram buffer,built-in logic,error correction codes,static random access memory,error correction coding,product codes,hamming codes,soft-error-resilient fpga,field programmable gate array reliability,d hpc,error correction capability,field programmable gate arrays,soft errors,built-in 2d hamming product code,system availability,multibit error correction scheme,radiation-induced soft error rate,2-d hpc,reliability,external memory,product code,error correction code,hardware,field programmable gate array,error correction,soft error | Universal Product Code,Hamming code,Soft error,Computer science,Field-programmable gate array,Static random-access memory,Error detection and correction,Electronic engineering,Sram cell,Computer hardware,Auxiliary memory | Journal |
Volume | Issue | ISSN |
20 | 2 | 1063-8210 |
Citations | PageRank | References |
15 | 1.00 | 9 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sang Phill Park | 1 | 535 | 31.56 |
| Dongsoo Lee | 2 | 233 | 30.63 |
| Kaushik Roy | 3 | 1531 | 142.83 |