Name
Abstract | ||
|---|---|---|
This work presents the first results of an experimental study concerning the reliability and the charge generation mechanisms in new typology power MOSFETs. Although there has been a copious production of scientific publications by several University researchers on single event failure modes of commercial electron devices in recent years, it remains essential to carry out further studies of the degenerative processes which could lead to failure because of the innovative features of the last power MOSFET generation. (C) 2002 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1016/S0026-2714(02)00202-0 | Microelectronics Reliability |
Field | DocType | Volume |
Power MOSFET,Electronic engineering,Engineering,Radiation | Journal | 42 |
Issue | ISSN | Citations |
9 | 0026-2714 | 2 |
PageRank | References | Authors |
1.45 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| F. Velardi | 1 | 31 | 12.32 |
| F. Iannuzzo | 2 | 106 | 42.25 |
| G. Busatto | 3 | 52 | 17.57 |
| J. Wyss | 4 | 5 | 4.29 |
| A. Kaminksy c | 5 | 2 | 1.45 |