Author Info
Name
Affiliation
Papers
F. VELARDI
Dept. of Automation, Electromagnetism, Information Engineering and Industrial Mathematics, University of Cassino, Via G. Di Biasio, 43, 03043 Cassino (FR) – Italy
13
Collaborators
Citations 
PageRank 
18
31
12.32
Referers 
Referees 
References 
58
11
14
Title
Citations
PageRank
Year
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.31.062017
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.00.342013
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.00.342012
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET20.632010
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions00.342009
Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure30.842008
Experimental study of power MOSFET’s gate damage in radiation environment20.792006
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET72.082005
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact21.452003
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement00.342003
Non-destructive high temperature characterisation of high-voltage IGBTs91.962002
The Reliability of New Generation Power MOSFETs in Radiation Environment21.452002
Non-destructive tester for single event burnout of power diodes.10.722001