Name
Abstract | ||
|---|---|---|
Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1109/IOLTS.2012.6313866 | IOLTS |
Keywords | Field | DocType |
dram memory,increased leakage current,technology shift,scaling limit,classical bulk technology,finfet technology,better channel control,scalability,leakage current,stability analysis,fluctuations,computer architecture | Dram,Leakage (electronics),Computer science,Communication channel,Electronic engineering,Real-time computing,Static random-access memory,MOSFET,Scaling,Scalability | Conference |
ISSN | Citations | PageRank |
1942-9398 | 0 | 0.34 |
References | Authors | |
2 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| E. Amat | 1 | 30 | 10.36 |
| A. Asenov | 2 | 24 | 15.23 |
| R. Canal | 3 | 14 | 2.26 |
| B. Cheng | 4 | 1 | 0.69 |
| J-Ll. Cruz | 5 | 0 | 0.34 |
| Z. Jaksic | 6 | 6 | 1.44 |
| M. Miranda | 7 | 144 | 11.00 |
| A. Rubio | 8 | 8 | 1.54 |
| P. Zuber | 9 | 1 | 0.69 |