Name
Abstract | ||
|---|---|---|
Oxide failure manifestation is reported to be even softer as the oxide thickness scales downwards the SiO2 limits. In this context, this paper gives a useful clarification between quasi-breakdown and breakdown phenomena occurring in ultrathin oxides. It is demonstrated that two failure modes, characterized by noise occurrence and current increase take place: one called quasi-breakdown, which failure site may be aged up to a stable stage, generating a leakage current significantly smaller than the classical hard breakdown and a second, the breakdown, which becomes more progressive with the oxide thickness reduction. Moreover, physical reasons explaining these softer behaviors are discussed and it is shown that the energy stored in the capacitor only impact the progressiveness of the failure site aging. On the contrary, the carrier energy at the anode drives the failure and can conduct to one or the other failure mode. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2001 | 10.1016/S0026-2714(01)00142-1 | Microelectronics Reliability |
Field | DocType | Volume |
Engineering physics,Engineering,Reliability engineering | Journal | 41 |
Issue | ISSN | Citations |
9 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. Bruyére | 1 | 12 | 6.64 |
| F. Monsieur | 2 | 17 | 12.42 |
| D. Roy | 3 | 0 | 0.34 |
| E. Vincent | 4 | 37 | 16.62 |
| Gérard Ghibaudo | 5 | 51 | 34.87 |