E. Vincent - Citegraph

Author Info

Name	Affiliation	Papers
E. VINCENT	STMicroelectronics, Central R&D labs, 850 rue Jean Monnet, BP16, 38926 Crolles, France	17
Collaborators	Citations	PageRank
37	37	16.62
Referers	Referees	References
142	46	11

Search Limit

100142

Publications (17 rows)

Collaborators (37 rows)

Referers (100 rows)

Referees (46 rows)

Title	Citations	PageRank	Year
Characterization and modeling of dynamic variability induced by BTI in nano-scaled transistors.	0	0.34	2018
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).	0	0.34	2018
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation	0	0.34	2010
Designing in reliability in advanced CMOS technologies	4	0.81	2006
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs	1	1.03	2005
A thorough investigation of MOSFETs NBTI degradation	16	3.62	2005
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides	1	1.21	2004
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs	0	0.34	2003
Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies	1	0.46	2003
MIM capacitance variation under electrical stress	4	1.03	2003
Gate oxide Reliability assessment optimization	0	0.34	2002
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement	0	0.34	2002
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions	3	1.72	2001
Failures in ultrathin oxides: Stored energy or carrier energy driven?	0	0.34	2001
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs	3	1.19	2001
Body effect induced wear-out acceleration in ultra-thin oxides	0	0.34	2001
Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides	4	2.86	2001

1