Paper Info
Title
Investigation Of Adjustable Current-Voltage Characteristics And Hysteresis Phenomena For Multiple-Peak Negative Differential Resistance Circuit
Abstract
A multiple-peak negative differential resistance (NOR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NOR circuits by suitably designing the MOS parameters This novel three-peak NOR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR) We can adjust the PVCR values to be as high as 115. 6 5. and ID 3 for three peaks, respectively Because the NOR circuit is a very strong nonlinear element. we discuss the extrinsic hysteresis phenomena in this multiple-peak NOR circuit The effect of series resistance on hysteresis phenomena is also investigated Our design and fabrication of the NOR circuit is based on the standard 0 35 mu m SiGe BICMOS process
Year
DOI
Venue
2010
10.1587/transele.E93.C.514
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
DocType
Volume
negative differential resistance, PVCR, hysteresis phenomena, BiCMOS process
Journal
E93C
Issue
ISSN
Citations 
4
1745-1353
0
PageRank 
References 
Authors
0.34
4
2
Name
Order
Citations
PageRank
Kwang-jow Gan1105.16
Dong-shong Liang284.74