Title
A New Methodology For Realistic Open Defect Detection Probability Evaluation Under Process Variations
Abstract
CMOS IC scaling has provided significant improvements in electronic circuit performance. Advances in test methodologies to deal with new failure mechanisms and nanometer issues are required. Interconnect opens are an important defect mechanism that requires detailed knowledge of its physical properties. In nanometer process, variability is predominant and considering only nominal value of parameters is not realistic. In this work, a model for computing a realistic coverage of via open defect that takes into account the process variability is proposed. Correlation between parameters of the affected gates is considered. Furthermore, spatial correlation of the parameters for those gates tied to the defective floating node can also influence the detectability of the defect. The proposed methodology is implemented in a software tool to determine the probability of detection of via opens for some ISCAS benchmark circuits. The proposed detection probability evaluation together with a test methodology to generate favorable logic conditions at the coupling lines can allow a better test quality leading to higher product reliability.
Year
DOI
Venue
2011
10.1109/VTS.2011.5783781
2011 IEEE 29TH VLSI TEST SYMPOSIUM (VTS)
Keywords
Field
DocType
process variation,couplings,transistors,gaussian distribution,logic gates,capacitance,cmos integrated circuits,correlation
Test method,Logic gate,Spatial correlation,Computer science,Electronic engineering,CMOS,Electronic circuit,Interconnection,Statistical power,Reliability engineering,Real versus nominal value
Conference
ISSN
Citations 
PageRank 
1093-0167
1
0.36
References 
Authors
10
3
Name
Order
Citations
PageRank
Jesus Moreno141.10
Víctor H. Champac212525.19
Michel Renovell374996.46