Name
Abstract | ||
|---|---|---|
A 2×2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna (255 × 250 μm2) is fabricated in a 130-nm logic CMOS process. The series resistance of diode is minimized using poly-gate separation (PGS), and exhibits a cut-off frequency of 2 THz. Each detector unit can detect an incident carrier with 100-Hz ~ 2-MHz amplitude modulation. At 1-MHz modulation frequency, the esti... |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1109/JSSC.2011.2165234 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Schottky diodes,Detectors,Noise,Resistance,Junctions,CMOS integrated circuits,Impedance | Noise-equivalent power,Responsivity,Diode,CMOS,Electronic engineering,Amplitude modulation,Schottky diode,Optoelectronics,Detector,Amplifier,Physics | Journal |
Volume | Issue | ISSN |
46 | 11 | 0018-9200 |
Citations | PageRank | References |
17 | 4.48 | 3 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ruonan Han | 1 | 152 | 27.20 |
| Yaming Zhang | 2 | 49 | 9.92 |
| Dominique Coquillat | 3 | 22 | 5.20 |
| Hadley Videlier | 4 | 17 | 4.48 |
| Wojciech Knap | 5 | 36 | 10.83 |
| Elliott Brown | 6 | 17 | 4.48 |
| Kenneth K. O | 7 | 249 | 42.87 |