Ruonan Han - Citegraph

Author Info

Name	Affiliation	Papers
RUONAN HAN	Department of Electrical and Computer Engineering, Cornell University, Ithaca	42
Collaborators	Citations	PageRank
136	152	27.20
Referers	Referees	References
302	205	105

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100302

Publications (42 rows)

Collaborators (100 rows)

Referers (100 rows)

Referees (100 rows)

Title	Citations	PageRank	Year
Physical-Layer Security for THz Communications via Orbital Angular Momentum Waves	0	0.34	2022
A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier With Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and >10% Power Back-off Efficiency.	0	0.34	2022
A 140GHz Transceiver with Integrated Antenna, Inherent-Low-Loss Duplexing and Adaptive Self-Interference Cancellation for FMCW Monostatic Radar	0	0.34	2022
A High-Efficiency 142–182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique	0	0.34	2022
Electronic THz Pencil Beam Forming and 2D Steering for High Angular-Resolution Operation: A 98 $\times$ 98-Unit 265GHz CMOS Reflectarray with In-Unit Digital Beam Shaping and Squint Correction	0	0.34	2022
Emerging Terahertz Integrated Systems in Silicon	4	0.41	2021
CMOS THz-ID: A 1.6-mm² Package-Less Identification Tag Using Asymmetric Cryptography and 260-GHz Far-Field Backscatter Communication	0	0.34	2021
A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture	4	0.42	2021
Erratum to “High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure”	0	0.34	2021
High-Scalability CMOS Quantum Magnetometer With Spin-State Excitation and Detection of Diamond Color Centers	2	0.72	2021
Realization of In-Band Full-Duplex Operation at 300 and 4.2 K Using Bilateral Single-Sideband Frequency Conversion	1	0.37	2021
11.9 A 105Gb/s Dielectric-Waveguide Link in 130nm BiCMOS Using Channelized 220-to-335GHz Signal and Integrated Waveguide Coupler	1	0.48	2021
A Terahertz Molecular Clock on CMOS Using High-Harmonic-Order Interrogation of Rotational Transition for Medium-/Long-Term Stability Enhancement	1	0.36	2021
29.5 Sub-THz CMOS Molecular Clock with 43ppt Long-Term Stability Using High-Order Rotational Transition Probing and Slot-Array Couplers.	0	0.34	2020
4.8 A Terahertz FMCW Comb Radar in 65nm CMOS with 100GHz Bandwidth	0	0.34	2020
29.8 THzID - A 1.6mm2 Package-Less Cryptographic Identification Tag with Backscattering and Beam-Steering at 260GHz.	0	0.34	2020
Chip-Scale Molecular Clock	1	0.36	2019
A 32-Unit 240-GHz Heterodyne Receiver Array in 65-nm CMOS With Array-Wide Phase Locking	2	0.37	2019
Opening Terahertz for Everyday Applications	4	0.47	2019
Molecular Detection for Unconcentrated Gas With ppm Sensitivity Using 220-to-320-GHz Dual-Frequency-Comb Spectrometer in CMOS.	1	0.36	2018
A CMOS Molecular Clock Probing 231.061-GHz Rotational Line of OCS with Sub-PPB Long-Term Stability and 66-MW DC Power	0	0.34	2018
CMOS terahertz receivers	0	0.34	2018
Room-Temperature Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry.	0	0.34	2018
High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure.	7	0.46	2018
Dual-Terahertz-Comb Spectrometer on CMOS for Rapid, Wide-Range Gas Detection With Absolute Specificity.	3	0.38	2017
Automatic modulation classification using compressive sensing based on High-Order Cumulants	0	0.34	2017
17.6 Rapid and energy-efficient molecular sensing using dual mm-Wave combs in 65nm CMOS: A 220-to-320GHz spectrometer with 5.2mW radiated power and 14.6-to-19.5dB noise figure.	1	0.48	2017
Energy-efficient terahertz electronics using multi-functional electromagnetism and high-parallelism architecture	0	0.34	2017
A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS.	4	0.40	2016
25.5 A 320GHz subharmonic-mixing coherent imager in 0.13µm SiGe BiCMOS.	1	0.49	2016
A SiGe Terahertz Heterodyne Imaging Transmitter With 3.3 mW Radiated Power and Fully-Integrated Phase-Locked Loop	17	1.18	2015
Schottky diodes in CMOS for terahertz circuits and systems	0	0.34	2013
A 260GHz broadband source with 1.1mW continuous-wave radiated power and EIRP of 15.7dBm in 65nm CMOS	8	1.42	2013
Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel	20	2.10	2013
A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy	31	2.05	2013
Terahertz Image Sensors Using Cmos Schottky Barrier Diodes	1	0.48	2012
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS.	7	1.04	2012
A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS.	17	4.48	2011
Progress and Challenges Towards Terahertz CMOS Integrated Circuits	7	0.73	2010
Multi-Level Amplitude Modulation of a 16.8-GHz Class-E Power Amplifier With Negative Resistance Enhanced Power Gain for 400-Mbps Data Transmission	1	0.37	2010
Towards terahertz operation of CMOS	3	0.60	2009
Paths to terahertz CMOS integrated circuits.	3	0.79	2009