Name
Abstract | ||
|---|---|---|
This paper presents a new method of passivation control by electroluminescence (EL) in 0.15μm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W=1×100μm), and eight fingers ones (W=8×125μm), is modified by defects located at the passivation/semiconductor interface and is characterized by a light emission along the drain contact. This abnormal emission reveals some modification of the electric field distribution in the gate-drain space probably induced by traps located at the passivation/semiconductor interface. These traps contribute to the creation of a virtual gate in the gate-drain space. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1016/j.microrel.2007.07.085 | Microelectronics Reliability |
Keywords | Field | DocType |
electroluminescence,electric field | Electric field,Electronic engineering,Engineering,High-electron-mobility transistor,Passivation,Optoelectronics,Electroluminescence,Semiconductor,Light emission | Journal |
Volume | Issue | ISSN |
47 | 9 | 0026-2714 |
Citations | PageRank | References |
2 | 2.16 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Bouya | 1 | 9 | 5.26 |
| D. Carisetti | 2 | 11 | 6.79 |
| N. Malbert | 3 | 22 | 12.29 |
| N. Labat | 4 | 20 | 10.40 |
| P. Perdu | 5 | 60 | 27.38 |
| J.C. Clément | 6 | 7 | 3.96 |
| M. Bonnet | 7 | 2 | 2.16 |
| G. Pataut | 8 | 2 | 2.49 |