Name
Abstract | ||
|---|---|---|
This paper presents an analysis of the electrical origins of Slow Write Driver Faults (SWDFs) [1] that may affect SRAM write drivers in 65nm technology. This type of fault is the consequence of resistive-open defects in the control part of the write driver. It involves an erroneous write operation when the same write driver performs two successive write operations with opposite data values. In the first part of the paper, we present the SWDF electrical phenomena and their consequences on the SRAM functioning. Next, we show how SWDFs can be sensitized and observed and how a standard March test is able to detect this type of fault. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/DATE.2007.364647 | DATE |
Keywords | Field | DocType |
control part,swdf electrical phenomenon,driver fault,test solution,resistive-open defect,opposite data value,electrical origin,sram functioning,slow write driver faults,sram technology,decoding,robots,testing,system on a chip | Electrical phenomena,System on a chip,Computer science,Test scheduling,Real-time computing,Static random-access memory,Embedded system | Conference |
ISSN | Citations | PageRank |
1530-1591 | 6 | 0.55 |
References | Authors | |
9 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Alexandre Ney | 1 | 18 | 2.99 |
| P. Girard | 2 | 69 | 6.89 |
| C. Landrault | 3 | 178 | 13.49 |
| S. Pravossoudovitch | 4 | 689 | 54.12 |
| A. Virazel | 5 | 169 | 23.25 |
| M. Bastian | 6 | 25 | 3.82 |