Title
A 27% active and 85% standby power reduction in dual-power-supply SRAM using BL power calculator and digitally controllable retention circuit.
Abstract
This paper presents circuit techniques to reduce both active and standby mode power, especially at room temperature (RT). A bit-line power calculator is used to adaptively set the cell supply voltage (V-CS) in the active mode. A digitally controllable retention circuit regulates V-CS in the standby mode with small control power. These circuits are implemented in a dual-power-supply SRAM in 28-nm CMOS technology. Compared with the conventional scheme, the power consumption in the active and standby mode at 25 degrees C is reduced by 27% and 85%, respectively.
Year
DOI
Venue
2014
10.1109/JSSC.2013.2280312
J. Solid-State Circuits
Keywords
DocType
Volume
Bit-line power, digital control, low power, replica BL, retention circuit, SRAM
Journal
49
Issue
ISSN
ISBN
1
0018-9200
978-1-4673-4515-6
Citations 
PageRank 
References 
3
0.40
6
Authors
11
Name
Order
Citations
PageRank
Fumihiko Tachibana1375.98
Osamu Hirabayashi27610.08
Yasuhisa Takeyama38611.06
Miyako Shizuno451.15
Atsushi Kawasumi515319.91
Keiichi Kushida67110.19
atsushi suzuki7638.55
Yusuke Niki8445.58
Shin-ichi Sasaki916044.66
Tomoaki Yabe108611.09
Yasuo Unekawa11325.89