Title
Electrical Characterization for Intertier Connections and Timing Analysis for 3-D ICs
Abstract
Reducing interconnect delay and power consumption has become a major concern in deep submicron designs. 3-D technologies have been proposed as a promising solution to mitigate interconnect problems. This paper examines the electrical characterization of vertical intertier connections such as through silicon via (TSV) and microbumps considering process variations and studies their timing impact on the circuit level. We first provide parasitic RC characteristics of intertier connections including TSV and microbumps and examine their delay. Then circuit simulation is performed to evaluate the timing impact of intertier connections.
Year
DOI
Venue
2012
10.1109/TVLSI.2010.2090049
IEEE Trans. VLSI Syst.
Keywords
Field
DocType
intertier connections,circuit level,deep submicron design,3-d ics,timing impact,electrical characterization,intertier connection,parasitic rc characteristic,3-d technology,major concern,timing analysis,vertical intertier connection,circuit simulation,integrated circuit,metals,through silicon via,process variation,capacitance,integrated circuit design
Capacitance,Computer science,Electronic engineering,Integrated circuit design,Through-silicon via,Static timing analysis,Interconnection,Electrical engineering,Power consumption
Journal
Volume
Issue
ISSN
20
1
1063-8210
Citations 
PageRank 
References 
15
0.95
5
Authors
9
Name
Order
Citations
PageRank
Xiaoxia Wu153538.61
Wei Zhao2150.95
Mark Nakamoto3161.39
Chandra Nimmagadda4150.95
Durodami Lisk5150.95
Sam Gu6150.95
Riko Radojcic7314.68
Matt Nowak8514.99
Yuan Xie96430407.00