Name
Abstract | ||
|---|---|---|
A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 μm BiCMOS ALCATEL technology, to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor, implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT. |
Year | DOI | Venue |
|---|---|---|
2003 | 10.1016/S0026-2714(03)00024-6 | Microelectronics Reliability |
Keywords | Field | DocType |
integrated circuit,chip | BiCMOS,Conversion gain,Power MOSFET,CMOS,Electronic engineering,Chip,Engineering,Integrated circuit,Electrical engineering,Gate driver,Biasing | Journal |
Volume | Issue | ISSN |
43 | 4 | 0026-2714 |
Citations | PageRank | References |
6 | 1.30 | 2 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Giovanni Busatto | 1 | 31 | 12.53 |
| Roberto La Capruccia | 2 | 6 | 1.30 |
| F. Iannuzzo | 3 | 106 | 42.25 |
| Francesco Velardi | 4 | 8 | 4.43 |
| Roberto Roncella | 5 | 111 | 27.03 |