Author Info
Name
Affiliation
Papers
FRANCESCO VELARDI
Department of Automation, Electromagnetics, Information Engineering and Industrial Mathematics, DAEIMI, University of Cassino, Via G. Di Biasio, 43, 03043 Cassino, Italy
9
Collaborators
Citations 
PageRank 
26
8
4.43
Referers 
Referees 
References 
24
38
13
Title
Citations
PageRank
Year
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.00.342018
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.00.342018
Measure of high frequency input impedance to study the instability of power devices in short circuit.00.342018
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT20.772015
Thermal damage in SiC Schottky diodes induced by SE heavy ions.00.342014
Turn-off instabilities in large area IGBTs.00.342014
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.00.342011
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.00.342004
MAGFET based current sensing for power integrated circuit61.302003